Growing Axially Uniform Low Silicon Content SiGe Crystals Using Liquid Phase Diffusion: A Numerical Investigation
Liquid Phase Diffusion (LPD) is a solution growth technique which has been used to grow axially graded composition bulk SixGe1-x crystals. In this work, the possibility of growing axially uniform composition crystals with low silicon content is examined numerically. In order to grow low silicon composition SixGe1-x crystals, the dynamic crucible pulling must be initiated during early hours of growth. However, during this growth period, the natural convection is quite strong and dynamic crucible translation might not lead to the desired outcome of growing axially uniform composition crystals. Hence, dynamic crystal pulling is combined with the static magnetic field and its combined influence on LPD is examined numerically. The results indicate that it is possible to grow low silicon content crystal with axially uniform composition by employing the combination of static magnetic field and dynamic crucible translation and its usage also leads to a significant improvement in the growth rate. However, before drawing a firm conclusion in this regard, these findings must be checked experimentally.